TY - Chin. Phys. B A1 - Min-Han Mi(宓珉瀚), Sheng Wu(武盛), Ling Yang(杨凌), Yun-Long He(何云龙), Bin Hou(侯斌), Meng Zhang(张濛), Li-Xin Guo(郭立新), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) T1 - In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT Y1 - 2020-04-05 JF - Chinese Physics B JO - Chin. Phys. B SP - 47104 EP - 047104 VL - 29 IS - 4 UR - https://cpb.iphy.ac.cn N1 - 10.1088/1674-1056/ab7746 ER -