TY - Chin. Phys. B A1 - Mei Ge(葛梅), Qing Cai(蔡青), Bao-Hua Zhang(张保花), Dun-Jun Chen(陈敦军), Li-Qun Hu(胡立群), Jun-Jun Xue(薛俊俊), Hai Lu(陆海), Rong Zhang(张荣), You-Dou Zheng(郑有炓) T1 - Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer Y1 - 2019-10-05 JF - Chinese Physics B JO - Chin. Phys. B SP - 107301 EP - 107301 VL - 28 IS - 10 UR - https://cpb.iphy.ac.cn N1 - 10.1088/1674-1056/ab3e00 ER -