TY - Chin. Phys. B A1 - Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) T1 - High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition Y1 - JF - Chinese Physics B JO - Chin. Phys. B SP - 18102 EP - 018102 VL - 28 IS - 1 UR - https://cpb.iphy.ac.cn N1 - 10.1088/1674-1056/28/1/018102 ER -