TY - Chin. Phys. B A1 - Xue Chen(陈雪), Zhi-Gang Wang(汪志刚), Xi Wang(王喜), James B Kuo T1 - Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator Y1 - 2018-04-05 JF - Chinese Physics B JO - Chin. Phys. B SP - 48502 EP - 048502 VL - 27 IS - 4 UR - https://cpb.iphy.ac.cn N1 - 10.1088/1674-1056/27/4/048502 ER -