TY - Chin. Phys. B A1 - Jun Luo(罗俊), Sheng-Lei Zhao(赵胜雷), Min-Han Mi(宓珉瀚), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) T1 - Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor Y1 - 2016-02-05 JF - Chinese Physics B JO - Chin. Phys. B SP - 27303 EP - 027303 VL - 25 IS - 2 UR - https://cpb.iphy.ac.cn N1 - 10.1088/1674-1056/25/2/027303 ER -