TY - Chin. Phys. B A1 - Zhou Xing-Ye(周幸叶), Zhang Jian(张健), Zhou Zhi-Ze(周致赜), Zhang Li-Ning(张立宁), Ma Chen-Yue(马晨月), Wu Wen(吴文), Zhao Wei(赵巍), and Zhang Xing(张兴) T1 - An improvement to computational efficiency of the drain current model for double-gate MOSFET Y1 - 2011-09-15 JF - Chinese Physics B JO - Chin. Phys. B SP - 97304 EP - 097304 VL - 20 IS - 9 UR - https://cpb.iphy.ac.cn N1 - 10.1088/1674-1056/20/9/097304 ER -