TY - Chin. Phys. B A1 - Zhou Yu-Ming(周郁明), He Yi-Gang(何怡刚), Lu Ai-Xia(陆爱霞), and Wan Qing(万青) T1 - Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary Y1 - 2009-09-20 JF - Chinese Physics B JO - Chin. Phys. B SP - 3966 EP - 3969 VL - 18 IS - 9 UR - https://cpb.iphy.ac.cn N1 - 10.1088/1674-1056/18/9/057 ER -