%A Xue Shu-Wen (薛书文), Zhang Jun (张军), Quan Jun (全军)
%T Effects of thermal annealing on the properties of N-implanted ZnS films
%0 Journal Article
%D 2014
%J Chin. Phys. B
%R 10.1088/1674-1056/23/5/057803
%P 57803-057803
%V 23
%N 5
%U {https://cpb.iphy.ac.cn/CN/abstract/article_116224.shtml}
%8 2014-05-15
%X N-ion-implantation to a fluence of 1× 1015 ions/cm2 was performed on ZnS thin films deposited on glass substrates by using the vacuum evaporation method. The films were annealed in flowing nitrogen at 400 ℃-500 ℃ after N-ion-implantation to repair the ion-beam-induced structural destruction and electrically activate the dopants. Effects of ion-implantation and post-thermal annealing on ZnS films were investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance, and electrical measurements. Results showed that the diffraction peaks and PL intensities were decreased by N-ion-implantation, but fully recovered by further annealing at 500 ℃. In this experiment, all films exhibited high resistivity due to the partial dopant activation under 500 ℃.