%A Xiangyang Xu, Changchun Chai, Qingyang Fan, Yintang Yang
%T Theoretical prediction of new C-Si alloys in *C*2/*m*-20 structure
%0 Journal Article
%D 2017
%J Chin. Phys. B
%R 10.1088/1674-1056/26/4/046101
%P 46101-046101
%V 26
%N 4
%U {http://cpb.iphy.ac.cn/CN/abstract/article_69651.shtml}
%8 2017-04-05
%X We study structural, mechanical, and electronic properties of C_{20}, Si_{20} and their alloys (C_{16}Si_{4}, C_{12}Si_{8}, C_{8}Si_{12}, and C_{4}Si_{16}) in *C*2/*m* structure by using density functional theory (DFT) based on first-principles calculations. The obtained elastic constants and the phonon spectra reveal mechanical and dynamic stability. The calculated formation enthalpy shows that the C-Si alloys might exist at a specified high temperature scale. The ratio of *B/G* and Poisson's ratio indicate that these C-Si alloys in *C*2/*m*-20 structure are all brittle. The elastic anisotropic properties derived by bulk modulus and shear modulus show slight anisotropy. In addition, the band structures and density of states are also depicted, which reveal that C_{20}, C_{16}Si_{4}, and Si_{20} are indirect band gap semiconductors, while C_{8}Si_{12} and C_{4}Si_{16} are semi-metallic alloys. Notably, a direct band gap semiconductor (C_{12}Si_{8}) is obtained by doping two indirect band gap semiconductors (C_{20} and Si_{20}).