%A Hao OuYang(欧阳豪), Qing-Xin Dong(董庆新), Yi-Fei Huang(黄奕飞), Jun-Sen Xiang(项俊森), Li-Bo Zhang(张黎博), Chen-Sheng Li(李晨圣), Pei-Jie Sun(孙培杰), Zhi-An Ren(任治安), and Gen-Fu Chen(陈根富) %T Electric and thermal transport properties of topological insulator candidate LiMgBi %0 Journal Article %D 2021 %J Chin. Phys. B %R 10.1088/1674-1056/ac009f %P 127101-127101 %V 30 %N 12 %U {https://cpb.iphy.ac.cn/CN/abstract/article_124137.shtml} %8 2021-11-15 %X We report the transport properties of a topological insulator candidate, LiMgBi. The electric resistivity of the title compound exhibits a metal-to-semiconductor-like transition at around 160 K and tends to saturation below 50 K. At low temperatures, the magnetoresistance is up to ~260% at 9 T and a clear weak antilocalization effect is observed in the low magnetic-field region. The Hall measurement reveals that LiMgBi is a multiband system, where hole-type carriers (nh~1018 cm-3) play a major role in the transport process. Remarkably, LiMgBi possess a large Seebeck coefficient (~440 μV/K) and a moderate thermal conductivity at room temperature, which indicate that LiMgBi is a promising candidate in thermoelectric applications.