%A Chunhua An(安春华), Zhihao Xu(徐志昊), Jing Zhang(张璟), Enxiu Wu(武恩秀), Xinli Ma(马新莉), Yidi Pang(庞奕荻), Xiao Fu(付晓), Xiaodong Hu(胡晓东), Dong Sun(孙栋), Jinshui Miao(苗金水), and Jing Liu(刘晶) %T Anisotropic photoresponse of layered rhenium disulfide synaptic transistors %0 Journal Article %D 2021 %J Chin. Phys. B %R 10.1088/1674-1056/abff26 %P 88503-088503 %V 30 %N 8 %U {https://cpb.iphy.ac.cn/CN/abstract/article_123821.shtml} %8 2021-07-16 %X Layered ReS2 with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices. However, systematic characterizations of the angle-dependent photoresponse of ReS2 are still very limited. Here, we studied the anisotropic photoresponse of layered ReS2 phototransistors in depth. Angel-resolved Raman spectrum and field-effect mobility are tested to confirm the inconsistency between its electrical and optical anisotropies, which are along 120° and 90°, respectively. We further measured the angle-resolved photoresponse of a ReS2 transistor with 6 diagonally paired electrodes. The maximum photoresponsivity exceeds 0.515 A·W-1 along b-axis, which is around 3.8 times larger than that along the direction perpendicular to b axis, which is consistent with the optical anisotropic directions. The incident wavelength- and power-dependent photoresponse measurement along two anisotropic axes further demonstrates that b axis has stronger light-ReS2 interaction, which explains the anisotropic photoresponse. We also observed angle-dependent photoresistive switching behavior of the ReS2 transistor, which leads to the formation of angle-resolved phototransistor memory. It has simplified structure to create dynamic optoelectronic resistive random access memory controlled spatially through polarized light. This capability has great potential for real-time pattern recognition and photoconfiguration of artificial neural networks (ANN) in a wide spectral range of sensitivity provided by polarized light.