%A Wei-Fan Wang(王伟凡), Jian-Feng Wang(王建峰), Yu-Min Zhang(张育民), Teng-Kun Li(李腾坤), Rui Xiong(熊瑞), Ke Xu(徐科)
%T Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
%0 Journal Article
%D 2020
%J Chin. Phys. B
%R 10.1088/1674-1056/ab7909
%P 47305-047305
%V 29
%N 4
%U {https://cpb.iphy.ac.cn/CN/abstract/article_122331.shtml}
%8 2020-04-05
%X The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized. Compared with the Schottky barrier diode (SBD) without boron-implanted termination, this SBD effectively improved the breakdown voltage from 189 V to 585 V and significantly reduced the reverse leakage current by 105 times. In addition, a high Ion/Ioff ratio of ~108 was achieved by the boron-implanted technology. We used Technology Computer Aided Design (TCAD) to analyze reasons for the improved performance of the SBD with boron-implanted termination. The improved performance of diodes may be attributed to that B+ could confine free carriers to suppress electron field crowding at the edge of the diode, which could improve the breakdown voltage and suppress the reverse leakage current.