%A Jin-Ming Shang(尚金铭), Jian Feng(冯健), Cheng-Ao Yang(杨成奥), Sheng-Wen Xie(谢圣文), Yi Zhang(张一), Cun-Zhu Tong(佟存柱), Yu Zhang(张宇), Zhi-Chuan Niu(牛智川) %T High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy %0 Journal Article %D 2019 %J Chin. Phys. B %R 10.1088/1674-1056/28/3/034202 %P 34202-034202 %V 28 %N 3 %U {https://cpb.iphy.ac.cn/CN/abstract/article_121490.shtml} %8 2019-03-05 %X

The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser (SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure, grown on Te-doped (001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector (DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μ wavelength operating near room temperature was achieved using a 3% output coupler.