%A Rongxuan Deng(邓荣轩), Haoran Zhang(张浩然), Yanhui Zhang(张燕辉), Zhiying Chen(陈志蓥), Yanping Sui(隋妍萍), Xiaoming Ge(葛晓明), Yijian Liang(梁逸俭), Shike Hu(胡诗珂), Guanghui Yu(于广辉), Da Jiang(姜达)
%T Graphene/Mo2C heterostructure directly grown by chemical vapor deposition
%0 Journal Article
%D 2017
%J Chin. Phys. B
%R 10.1088/1674-1056/26/6/067901
%P 67901-067901
%V 26
%N 6
%U {https://cpb.iphy.ac.cn/CN/abstract/article_119708.shtml}
%8 2017-06-05
%X Graphene-based heterostructure is one of the most attractive topics in physics and material sciences due to its intriguing properties and applications. We report the one-step fabrication of a novel graphene/Mo2C heterostructure by using chemical vapor deposition (CVD). The composition and structure of the heterostructure are characterized through energy-dispersive spectrometer, transmission electron microscope, and Raman spectrum. The growth rule analysis of the results shows the flow rate of methane is a main factor in preparing the graphene/Mo2C heterostructure. A schematic diagram of the growth process is also established. Transport measurements are performed to study the superconductivity of the heterostructure which has potential applications in superconducting devices.