%A Rongxuan Deng(邓荣轩), Haoran Zhang(张浩然), Yanhui Zhang(张燕辉), Zhiying Chen(陈志蓥), Yanping Sui(隋妍萍), Xiaoming Ge(葛晓明), Yijian Liang(梁逸俭), Shike Hu(胡诗珂), Guanghui Yu(于广辉), Da Jiang(姜达) %T Graphene/Mo2C heterostructure directly grown by chemical vapor deposition %0 Journal Article %D 2017 %J Chin. Phys. B %R 10.1088/1674-1056/26/6/067901 %P 67901-067901 %V 26 %N 6 %U {https://cpb.iphy.ac.cn/CN/abstract/article_119708.shtml} %8 2017-06-05 %X Graphene-based heterostructure is one of the most attractive topics in physics and material sciences due to its intriguing properties and applications. We report the one-step fabrication of a novel graphene/Mo2C heterostructure by using chemical vapor deposition (CVD). The composition and structure of the heterostructure are characterized through energy-dispersive spectrometer, transmission electron microscope, and Raman spectrum. The growth rule analysis of the results shows the flow rate of methane is a main factor in preparing the graphene/Mo2C heterostructure. A schematic diagram of the growth process is also established. Transport measurements are performed to study the superconductivity of the heterostructure which has potential applications in superconducting devices.