%A Ying-Jie Lu(卢英杰), Zhi-Feng Shi(史志锋), Chong-Xin Shan(单崇新), De-Zhen Shen(申德振) %T ZnO-based deep-ultraviolet light-emitting devices %0 Journal Article %D 2017 %J Chin. Phys. B %R 10.1088/1674-1056/26/4/047703 %P 47703-047703 %V 26 %N 4 %U {https://cpb.iphy.ac.cn/CN/abstract/article_119587.shtml} %8 2017-04-05 %X

Deep-ultraviolet (DUV) light-emitting devices (LEDs) have a variety of potential applications. Zinc-oxide-based materials, which have wide bandgap and large exciton binding energy, have potential applications in high-performance DUV LEDs. To realize such optoelectronic devices, the modulation of the bandgap is required. This has been demonstrated by the developments of MgxZn1-xO and BexZn1-xO alloys for the larger bandgap materials. Many efforts have been made to obtain DUV LEDs, and promising successes have been achieved continuously. In this article, we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.