%A Sheng-Rui Xu(许晟瑞), Ying Zhao(赵颖), Ren-Yuan Jiang(蒋仁渊), Teng Jiang(姜腾), Ze-Yang Ren(任泽阳), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) %T Semipolar (1122) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition %0 Journal Article %D 2017 %J Chin. Phys. B %R 10.1088/1674-1056/26/2/027801 %P 27801-027801 %V 26 %N 2 %U {https://cpb.iphy.ac.cn/CN/abstract/article_119359.shtml} %8 2017-02-05 %X High indium semipolar (1122) and polar (0001) InGaN layers each with a thickness of about 100 nm are realized simultaneously on sapphire substrates by pulsed metal organic chemical vapor deposition (MOCVD). The morphology evolution, structural and optical characteristics are also studied. The indium content in the layer of the surface (1122) is larger than that of the surface (0001), which is confirmed by reciprocal space map, photoluminescence spectrum and secondary ion mass spectrometer. Additionally, the (0001) surface with island-like morphology shows inhomogeneous indium incorporation, while the (1122) surface with a spiral-like morphology shows a better homogeneous In composition. This feature is also demonstrated by the monochromatic cathodoluminescence map.