%A Miao Geng(耿苗), Pei-Xian Li(李培咸), Wei-Jun Luo(罗卫军), Peng-Peng Sun(孙朋朋), Rong Zhang(张蓉), Xiao-Hua Ma(马晓华) %T Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method %0 Journal Article %D 2016 %J Chin. Phys. B %R 10.1088/1674-1056/25/11/117301 %P 117301-117301 %V 25 %N 11 %U {https://cpb.iphy.ac.cn/CN/abstract/article_119085.shtml} %8 2016-11-05 %X A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor (HEMT) switch. The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range. The percentage errors Eij within 3.83% show the great agreement between the simulated S-parameters and the measured data.