%A Hao Wang(王昊), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Wang Zhang(张望), Qi-Feng Lyu(吕奇峰), Liu-Hong Ma(马刘红), Fu-Hua Yang(杨富华) %T Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor %0 Journal Article %D 2016 %J Chin. Phys. B %R 10.1088/1674-1056/25/10/108102 %P 108102-108102 %V 25 %N 10 %U {https://cpb.iphy.ac.cn/CN/abstract/article_119044.shtml} %8 2016-10-05 %X

We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport measurement. The Arrhenius plot of the temperature-dependent conductance demonstrates the transport behaviors of variable-range hopping (below 30 K) and nearest-neighbor hopping (above 30 K). The activation energy for the charge delocalization gradually decreases due to the confinement potential of the conduction channel decreasing from the threshold voltage to the flatband voltage. With the increase of the source-drain bias, the activation energy increases in a temperature range from 30 K to 100 K at a fixed gate voltage, but decreases above the temperature of 100 K.