%A Li-Fan Wu(武利翻), Yu-Ming Zhang(张玉明), Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门)
%T Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics
%0 Journal Article
%D 2016
%J Chin. Phys. B
%R 10.1088/1674-1056/25/10/108101
%P 108101-108101
%V 25
%N 10
%U {https://cpb.iphy.ac.cn/CN/abstract/article_119043.shtml}
%8 2016-10-05
%X Al2O3 and HfO2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al2O3 layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37×10-6 A/cm2 and 3.22×10-6A/cm2 at +1 V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively. Compared with the HfO2/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al2O3/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Qot) value and the interface state density (Dit).