%A Zhen-Hua Wu(武振华), Lei Chen(陈蕾), Qiang Tian(田强) %T Fractional-dimensional approach for excitons in GaAsfilms on AlxGa1-xAs substrates %0 Journal Article %D 2016 %J Chin. Phys. B %R 10.1088/1674-1056/25/3/037310 %P 37310-037310 %V 25 %N 3 %U {https://cpb.iphy.ac.cn/CN/abstract/article_118409.shtml} %8 2016-03-05 %X Binding energies of excitons in GaAs films on AlxGa1-xAs substrates are studied theoretically with the fractional-dimensional approach. In this approach, the real anisotropic “exciton+film” semiconductor system is mapped into an effective fractional-dimensional isotropic space. For different aluminum concentrations and substrate thicknesses, the exciton binding energies are obtained as a function of the film thickness. The numerical results show that, for different aluminum concentrations and substrate thicknesses, the exciton binding energies in GaAs films on AlxGa1-xAs substrates all exhibit their maxima with increasing film thickness. It is also shown that the binding energies of heavy-hole and light-hole excitons both have their maxima with increasing film thickness.