%A Jun Luo(罗俊), Sheng-Lei Zhao(赵胜雷), Min-Han Mi(宓珉瀚), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) %T Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor %0 Journal Article %D 2016 %J Chin. Phys. B %R 10.1088/1674-1056/25/2/027303 %P 27303-027303 %V 25 %N 2 %U {https://cpb.iphy.ac.cn/CN/abstract/article_118330.shtml} %8 2016-02-05 %X The effects of gate length LG on breakdown voltage VBR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with LG = 1 μm~ 20 μm. With the increase of LG, VBR is first increased, and then saturated at LG=3 μm. For the HEMT with LG=1 μm, breakdown voltage VBR is 117 V, and it can be enhanced to 148 V for the HEMT with LG = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with LG>3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG = 3 μm~ 20 μm, and their breakdown voltages are in a range of 140 V-156 V.