%A Chen Jian (陈键), Du Gang (杜刚), Liu Xiao-Yan (刘晓彦)
%T Threshold switching uniformity in In2Se3 nanowire-based phase change memory
%0 Journal Article
%D 2015
%J Chin. Phys. B
%R 10.1088/1674-1056/24/5/057702
%P 57702-057702
%V 24
%N 5
%U {https://cpb.iphy.ac.cn/CN/abstract/article_117451.shtml}
%8 2015-05-05
%X The uniformity of threshold voltage and threshold current in the In2Se3 nanowire-based phase change memory (PCM) devices is investigated. Based on the trap-limited transport model, amorphous layer thickness, trap density, and trap depth are considered to clarify their influences upon the threshold voltage and threshold current through simulations.