%A Chen Jian (陈键), Du Gang (杜刚), Liu Xiao-Yan (刘晓彦) %T Threshold switching uniformity in In2Se3 nanowire-based phase change memory %0 Journal Article %D 2015 %J Chin. Phys. B %R 10.1088/1674-1056/24/5/057702 %P 57702-057702 %V 24 %N 5 %U {https://cpb.iphy.ac.cn/CN/abstract/article_117451.shtml} %8 2015-05-05 %X The uniformity of threshold voltage and threshold current in the In2Se3 nanowire-based phase change memory (PCM) devices is investigated. Based on the trap-limited transport model, amorphous layer thickness, trap density, and trap depth are considered to clarify their influences upon the threshold voltage and threshold current through simulations.