%A Li Kun (李坤), Yang Wen (杨雯), Wei Ji-Lin (魏计林), Du Shi-Wen (杜诗文), Li Yong-Tang (李永堂) %T Modeling of metal-oxide semiconductor:Analytical bond-order potential for cupric oxide %0 Journal Article %D 2014 %J Chin. Phys. B %R 10.1088/1674-1056/23/4/047103 %P 47103-047103 %V 23 %N 4 %U {https://cpb.iphy.ac.cn/CN/abstract/article_116114.shtml} %8 2014-04-15 %X Atomistic potentials for cupric element and cupric oxide are derived based on the analytical bond-order scheme that was presented by Brenner [Brenner D W, "Erratum: Empirical potential for hydrocarbons for use in simulating the chemical vapor deposition of diamond films", Phys. Rev. B 1992, 46 1948]. In this paper, for the pure cupric element, the energy and structural parameters for several bulk phases as well as dimmer structure are well reproduced. The reference data are taken from our density functional theory calculations and the available experiments. The model potential also provides a good description of the bulk properties of various solid structures of cupric oxide compound structures, including cohesive energies, lattice parameters, and elastic constants.