%A Yan Shao-An (燕少安), Tang Ming-Hua (唐明华), Zhao Wen (赵雯), Guo Hong-Xia (郭红霞), Zhang Wan-Li (张万里), Xu Xin-Yu (徐新宇), Wang Xu-Dong (王旭东), Ding Hao (丁浩), Chen Jian-Wei (陈建伟), Li Zheng (李正), Zhou Yi-Chun (周益春) %T Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation %0 Journal Article %D 2014 %J Chin. Phys. B %R 10.1088/1674-1056/23/4/046104 %P 46104-046104 %V 23 %N 4 %U {https://cpb.iphy.ac.cn/CN/abstract/article_116085.shtml} %8 2014-04-15 %X The single event effect in ferroelectric-gate field-effect transistor (FeFET) under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor (MOSFET) when the ion strikes the channel. The main reason is that the polarization-induced charges (the polarization direction here is away from the silicon surface) bring a negative surface potential which will affect the distribution of carriers and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.