%A Li Xin-Kun(李新坤), Liang De-Chun(梁德春), Jin Peng(金鹏), An Qi(安琪), Wei Heng(魏恒), Wu Jian(吴剑), and Wang Zhan-Guo(王占国) %T InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm %0 Journal Article %D 2012 %J Chin. Phys. B %R 10.1088/1674-1056/21/2/028102 %P 28102-028102 %V 21 %N 2 %U {https://cpb.iphy.ac.cn/CN/abstract/article_113394.shtml} %8 2012-01-30 %X According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.