%A Zhang Ke-Ying (张科营), Guo Hong-Xia (郭红霞), Luo Yin-Hong (罗尹虹), Fan Ru-Yu (范如玉), Chen Wei (陈伟), Lin Dong-Sheng (林东生), Guo Gang (郭刚), Yan Yi-Hua (闫逸华) %T First principles simulation technique for characterizing single event effects %0 Journal Article %D 2011 %J Chin. Phys. B %R 10.1088/1674-1056/20/6/068501 %P 68501-068501 %V 20 %N 6 %U {https://cpb.iphy.ac.cn/CN/abstract/article_112978.shtml} %8 2011-06-15 %X This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25 μm advanced complementary metal-oxide-semiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.