%A Hou Zhi-Ling(侯志灵), Cao Mao-Sheng(曹茂盛), Yuan Jie(袁杰), and Song Wei-Li(宋维力) %T Temperature-frequency dependence and mechanism of dielectric properties for $\gamma$-Y2Si2O7 %0 Journal Article %D 2010 %J Chin. Phys. B %R 10.1088/1674-1056/19/1/017702 %P 17702-017702 %V 19 %N 1 %U {https://cpb.iphy.ac.cn/CN/abstract/article_111111.shtml} %8 2010-01-15 %X This paper reports that single-phase $\gamma$ -Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of $\gamma$ -Y2Si2O7 as a function of the temperature and frequency. The $\gamma$ -Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 ℃ in the range of 7.3--18 GHz. The mechanism for polarization relaxation of the as-prepared $\gamma$ -Y2Si2O7 differing from that of SiO2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.