%A Cao Yan-Rong(曹艳荣), Ma Xiao-Hua(马晓华), Hao Yue(郝跃), Zhang Yue(张月), Yu Lei(于磊), Zhu Zhi-Wei(朱志炜), and Chen Hai-Feng(陈海峰) %T Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs %0 Journal Article %D 2007 %J Chin. Phys. B %R 10.1088/1009-1963/16/4/047 %P 1140-1144 %V 16 %N 4 %U {https://cpb.iphy.ac.cn/CN/abstract/article_109079.shtml} %8 2007-04-20 %X Taking the actual operating condition of complementary metal oxide semiconductor (CMOS) circuit into account, conventional direct current (DC) stress study on negative bias temperature instability (NBTI) neglects the detrapping of oxide positive charges and the recovery of interface states under the `low' state of p-channel metal oxide semiconductor field effect transistors (MOSFETs) inverter operation. In this paper we have studied the degradation and recovery of NBTI under alternating stress, and presented a possible recovery mechanism. The three stages of recovery mechanism under positive bias are fast recovery, slow recovery and recovery saturation.