@article{Ren-Jie Liu(刘仁杰):86104,
author = {Ren-Jie Liu(刘仁杰) and Jia-Jie Lin(林家杰) and N Daghbouj and Jia-Liang Sun(孙嘉良) and Tian-Gui You(游天桂) and Peng Gao(高鹏) and Nie-Feng Sun(孙聂枫) and Min Liao(廖敏)},
title = {Mechanism of defect evolution in H+ and He+ implanted InP},
publisher = {Chin. Phys. B},
year = {2021},
journal = {Chinese Physics B},
volume = {30},
number = {8},
eid = {086104},
pages = {086104},
keywords = {ion implantation;defect evolution;ion-slicing;damaged band},
url = {https://cpb.iphy.ac.cn/EN/abstract/article_123806.shtml},
doi = {10.1088/1674-1056/abf640}
}