@article{Ya-Chao Zhang(张雅超):18102, author = {Ya-Chao Zhang(张雅超) and Zhi-Zhe Wang(王之哲) and Rui Guo(郭蕊) and Ge Liu(刘鸽) and Wei-Min Bao(包为民) and Jin-Cheng Zhang(张进成) and Yue Hao(郝跃)}, title = {High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition}, publisher = {Chin. Phys. B}, year = {2019}, journal = {Chinese Physics B}, volume = {28}, number = {1}, eid = {018102}, pages = {018102}, keywords = {
InAlGaN;enhancement-mode;metal-oxide-semiconductor high electron mobility transistor;threshold voltage
}, url = {https://cpb.iphy.ac.cn/EN/abstract/article_121387.shtml}, doi = {10.1088/1674-1056/28/1/018102} }