@article{Dong Zhang(张东):17303, author = {Dong Zhang(张东) and Chenfei Wu(武辰飞) and Weizong Xu(徐尉宗) and Fangfang Ren(任芳芳) and Dong Zhou(周东) and Peng Yu(于芃) and Rong Zhang(张荣) and Youdou Zheng(郑有炓) and Hai Lu(陆海)}, title = {Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors}, publisher = {Chin. Phys. B}, year = {2019}, journal = {Chinese Physics B}, volume = {28}, number = {1}, eid = {017303}, pages = {017303}, keywords = {
amorphous InGaZnO thin-film transistor;self-heating effect;threshold voltage shift;pulsed negative gate bias
}, url = {https://cpb.iphy.ac.cn/EN/abstract/article_121333.shtml}, doi = {10.1088/1674-1056/28/1/017303} }