Investigation of single event effect in 28-nm system-on-chip with multi patterns

doi:10.1088/1674-1056/ab99b8

Abstract

Single event effects (SEEs) in a 28-nm system-on-chip (SoC) were assessed using heavy ion irradiations, and susceptibilities in different processor configurations with data accessing patterns were investigated. The patterns included the sole processor (SP) and asymmetric multiprocessing (AMP) patterns with static and dynamic data accessing. Single event upset (SEU) cross sections in static accessing can be more than twice as high as those of the dynamic accessing, and processor configuration pattern is not a critical factor for the SEU cross sections. Cross section interval of upset events was evaluated and the soft error rates in aerospace environment were predicted for the SoC. The tests also indicated that ultra-high linear energy transfer (LET) particle can cause exception currents in the 28-nm SoC, and some even are lower than the normal case.

Keywords: system-on-chip heavy ion single event effect

Received: 07 May 2020
Revised: 19 May 2020
Accepted manuscript online: 05 June 2020

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	21.60.Ka	(Monte Carlo models)

Corresponding Authors: ^†Corresponding author. E-mail: yonghongli@mail.xjtu.edu.cn

About author:

†Corresponding author. E-mail: yonghongli@mail.xjtu.edu.cn

* Project supported by the National Natural Science Foundation of China (Grant Nos. 11575138, 11835006, 11690040, and 11690043), the Fund from Innovation Center of Radiation Application (Grant No. KFZC2019050321), the Fund from the Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics (Grant No. ZWK1804), and the Program of China Scholarships Council (Grant No. 201906280343).

Cite this article:

Wei-Tao Yang(杨卫涛), Yong-Hong Li(李永宏)†, Ya-Xin Guo(郭亚鑫), Hao-Yu Zhao(赵浩昱), Yang Li(李洋), Pei Li(李培), Chao-Hui He(贺朝会), Gang Guo(郭刚), Jie Liu(刘杰), Sheng-Sheng Yang(杨生胜), and Heng An(安恒) Investigation of single event effect in 28-nm system-on-chip with multi patterns 2020 Chin. Phys. B 29 108504

Table 1.

The used ions in the heavy ion irradiation.

Fig. 1.

SEU cross sections in HI-13 irradiation.

Table 2.

The detected errors in the HI-13 irradiation.

Fig. 2.

SEFI cross sections in the HI-13 irradiation.

Table 3.

The parameters of the tests in HIRFL irradiation.

Table 4.

The detected SEE in HIRFL irradiation.

Fig. 3.

The detected upset cells in the HIRFL irradiation.

Fig. 4.

The cross sections of the tests in HIRFL irradiation.

Fig. 5.

The detected currents in the HIRFL irradiation, (a) the currents are higher than the normal case, (b) a part of the currents are less than the normal case.

Table 5.

The cross sections ratio between static and dynamic tests in HI-13 irradiation.

Fig. 6.

The Weibull fitting from the irradiation tests.

Table 6.

The Weibull function parameters for both fittings.

Table 7.

The predicted SoC orbit soft error rate.

Fig. 7.

SEFI cross section of different tests in HIRFL irradiation.

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Investigation of single event effect in 28-nm system-on-chip with multi patterns

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