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Chin. Phys. B, 2020, Vol. 29(9): 097301    DOI: 10.1088/1674-1056/ab9434
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation

Ji-Long Hao(郝继龙)1,2, Yun Bai(白云)1,2, Xin-Yu Liu(刘新宇)1,2, Cheng-Zhan Li(李诚瞻)3, Yi-Dan Tang(汤益丹)1,2, Hong Chen(陈宏)1,2, Xiao-Li Tian(田晓丽)1,2, Jiang Lu(陆江)1,2, Sheng-Kai Wang(王盛凯)1,2
1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou 412000, China
Abstract  Effective improvement in electrical properties of NO passivated SiC/SiO2 interface after being irradiated by electrons is demonstrated. The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude, specifically, from 3×1012 cm-2·eV-1 to 4×1011 cm-2·eV-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field. Particularly, the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation, indicating that the carbon-related defects are further reduced.
Keywords:  SiC      electron irradiation      interface traps      MOS  
Received:  18 March 2020      Revised:  01 May 2020      Accepted manuscript online:  19 May 2020
PACS:  73.20.-r (Electron states at surfaces and interfaces)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0100601) and the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159).
Corresponding Authors:  Yun Bai, Xin-Yu Liu     E-mail:  baiyun@ime.ac.cn;xyliu@ime.ac.cn

Cite this article: 

Ji-Long Hao(郝继龙), Yun Bai(白云), Xin-Yu Liu(刘新宇), Cheng-Zhan Li(李诚瞻), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Jiang Lu(陆江), Sheng-Kai Wang(王盛凯) Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation 2020 Chin. Phys. B 29 097301

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