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Chin. Phys. B, 2020, Vol. 29(6): 068503    DOI: 10.1088/1674-1056/ab836e
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Design of a novel high holding voltage LVTSCR with embedded clamping diode

Ling Zhu(朱玲), Hai-Lian Liang(梁海莲), Xiao-Feng Gu(顾晓峰), Jie Xu(许杰)
Engineering Research Center of IoT Technology Applications(Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China
Abstract  In order to reduce the latch-up risk of the traditional low-voltage-triggered silicon controlled rectifier (LVTSCR), a novel LVTSCR with embedded clamping diode (DC-LVTSCR) is proposed and verified in a 0.18-μm CMOS process. By embedding a p+ implant region into the drain of NMOS in the traditional LVTSCR, a reversed Zener diode is formed by the p+ implant region and the n+ bridge, which helps to improve the holding voltage and decrease the snapback region. The physical mechanisms of the LVTSCR and DC-LVTSCR are investigated in detail by transmission line pulse (TLP) tests and TCAD simulations. The TLP test results show that, compared with the traditional LVTSCR, the DC-LVTSCR exhibits a higher holding voltage of 6.2 V due to the embedded clamping diode. By further optimizing a key parameter of the DC-LVTSCR, the holding voltage can be effectively increased to 8.7 V. Therefore, the DC-LVTSCR is a promising ESD protection device for circuits with the operation voltage of 5.5-7 V.
Keywords:  electrostatic discharge      silicon controlled rectifier      clamping diode      holding voltage  
Received:  04 December 2019      Revised:  18 March 2020      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61504049) and the China Postdoctoral Science Foundation (Grant No. 2016M600361).
Corresponding Authors:  Xiao-Feng Gu     E-mail:  xgu@jiangnan.edu.cn

Cite this article: 

Ling Zhu(朱玲), Hai-Lian Liang(梁海莲), Xiao-Feng Gu(顾晓峰), Jie Xu(许杰) Design of a novel high holding voltage LVTSCR with embedded clamping diode 2020 Chin. Phys. B 29 068503

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