Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure

doi:10.1088/1674-1056/ab81fc

Abstract The excellent reverse breakdown characteristics of Schottky barrier varactor (SBV) are crucially required for the application of high power and high efficiency multipliers. The SBV with a novel Schottky structure named metal-brim is fabricated and systemically evaluated. Compared with normal structure, the reverse breakdown voltage of the new type SBV improves from -7.31 V to -8.75 V. The simulation of the Schottky metal-brim SBV is also proposed. Three factors, namely distribution of leakage current, the electric field, and the area of space charge region are mostly concerned to explain the physical mechanism. Schottky metal-brim structure is a promising approach to improve the reverse breakdown voltage and reduce leakage current by eliminating the accumulation of charge at Schottky electrode edge.

Keywords: breakdown characteristics Schottky metal-brim Schottky barrier varactor GaAs

Received: 20 December 2019
Revised: 10 March 2020
Accepted manuscript online:

PACS:	73.40.Mr	(Semiconductor-electrolyte contacts)
	73.61.Ey	(III-V semiconductors)
	85.30.Kk	(Junction diodes)
	42.65.Ky	(Frequency conversion; harmonic generation, including higher-order harmonic generation)

Corresponding Authors: Jing-Tao Zhou
E-mail: zhoujingtao@ime.ac.cn

Cite this article:

Lu-Wei Qi(祁路伟), Xiao-Yu Liu(刘晓宇), Jin Meng(孟进), De-Hai Zhang(张德海), Jing-Tao Zhou(周静涛) Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure 2020 Chin. Phys. B 29 057306

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Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure

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