Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles

doi:10.1088/1674-1056/ab6c4c

Abstract According to the one-dimensional quantum state distribution, carrier scattering, and fixed range hopping model, the structural stability and electron transport properties of N-, P-, and As-doped SiC nanowires (N-SiCNWs, P-SiCNWs, and As-SiCNWs) are simulated by using the first principles calculations. The results show that the lattice structure of N-SiCNWs is the most stable in the lattice structures of the above three kinds of doped SiCNWs. At room temperature, for unpassivated SiCNWs, the doping effect of P and As are better than that of N. After passivation, the conductivities of all doped SiCNWs increase by approximately two orders of magnitude. The N-SiCNW has the lowest conductivity. In addition, the N-, P-, As-doped SiCNWs before and after passivation have the same conductivity-temperature characteristics, that is, above room temperature, the conductivity values of the doped SiCNWs all increase with temperature increasing. These results contribute to the electronic application of nanodevices.

Keywords: N- P- As-doped SiC nanowires transport properties first-principles theory

Received: 15 December 2019
Revised: 13 January 2020
Accepted manuscript online:

PACS:	73.63.-b	(Electronic transport in nanoscale materials and structures)
	61.72.U-	(Doping and impurity implantation)
	63.20.dk	(First-principles theory)
	81.07.Gf	(Nanowires)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11574261) and the Natural Science Foundation of Hebei Province, China (Grant No. A2015203261).

Corresponding Authors: Xiao-Yong Fang
E-mail: fang@ysu.edu.cn

Cite this article:

Ya-Lin Li(李亚林), Pei Gong(龚裴), Xiao-Yong Fang(房晓勇) Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles 2020 Chin. Phys. B 29 037304

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Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles

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