Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin films

doi:10.1088/1674-1056/ab6c4a

Abstract Hafnium disulfide (HfS₂) is a promising two-dimensional material for scaling electronic devices due to its higher carrier mobility, in which the combination of two-dimensional materials with traditional semiconductors in the framework of CMOS-compatible technology is necessary. We reported on the deposition of HfS₂ nanocrystals by remote plasma enhanced atomic layer deposition at low temperature using Hf(N(CH₃)(C₂H₅))₄ and H₂S as the reaction precursors. Self-limiting reaction behavior was observed at the deposition temperatures ranging from 150℃ to 350℃, and the film thickness increased linearly with the growth cycles. The uniform HfS₂ nanocrystal thin films were obtained with the size of nanocrystal grain up to 27 nm. It was demonstrated that higher deposition temperature could enlarge the grain size and improve the HfS₂ crystallinity, while causing crystallization of the mixed HfO₂ above 450℃. These results suggested that atomic layer deposition is a low-temperature route to synthesize high quality HfS₂ nanocrystals for electronic device or electrochemical applications.

Keywords: HfS₂ atomic layer deposition surface morphology

Received: 10 December 2019
Revised: 09 January 2020
Accepted manuscript online:

PACS:	81.07.Bc	(Nanocrystalline materials)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200103).

Corresponding Authors: Cheng Li
E-mail: lich@xmu.edu.cn

Cite this article:

Ailing Chang(常爱玲), Yichen Mao(毛亦琛), Zhiwei Huang(黄志伟), Haiyang Hong(洪海洋), Jianfang Xu(徐剑芳), Wei Huang(黄巍), Songyan Chen(陈松岩), Cheng Li(李成) Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films 2020 Chin. Phys. B 29 038102

[1]	Butler S Z, Hollen S M, Cao L, Cui Y, Gupta J A, Gutiérrez H R, Heinz T F, Hong S S, Huang J, Ismach A F, Johnston-Halperin E, Kuno M, Plashnitsa V V, Robinson R D, Ruoff R S, Salahuddin S, Shan J, Shi L, Spencer M G, Terrones M, Windl W and Goldberger J E 2013 ACS Nano 7 2898
[2]	Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N and Strano M S 2012 Nat. Nanotechnol. 7 699
[3]	Manzeli S, Ovchinnikov D, Pasquier D, Yazyev O V and Kis A 2017 Nat. Rev. Mater. 2 17033
[4]	Choi W, Choudhary N, Han G H, Park J, Akinwande D and Lee Y H 2017 Mater. Today 20 116
[5]	Duong D L, Yun S J and Lee Y H 2017 ACS Nano 11 11803
[6]	Kanazawa T, Amemiya T, Ishikawa A, Upadhyaya V, Tsuruta K, Tanaka T and Miyamoto Y 2016 Sci. Rep. 6 22277
[7]	Mirabelli G, McGeough C, Schmidt M, McCarthy E K, Monaghan S, Povey I M, McCarthy M, Gity F, Nagle R, Hughes G, Cafolla A, Hurley P K and Duffy R 2016 J. Appl. Phys. 120 125102
[8]	Chae S H, Jin Y, Kim T S, Chung D S, Na H, Nam H, Kim H, Perello D J, Jeong H Y, Ly T H and Lee Y H 2016 ACS Nano 10 1309
[9]	Wang D, Zhang X and Wang Z 2018 J. Nanosci. Nanotechnol. 18 7319
[10]	Yan C, Gan L, Zhou X, Guo J, Huang W, Huang J, Jin B, Xiong J, Zhai T and Li Y 2017 Adv. Funct. Mater. 27 1702918
[11]	Wang D, Zhang X, Liu H, Meng J, Xia J, Yin Z, Wang Y, You J and Meng X M 2017 2D Mater. 4 031012
[12]	Fu L, Wang F, Wu B, Wu N, Huang W, Wang H, Jin C, Zhuang L, He J, Fu L and Liu Y 2017 Adv. Mater. 29 1700439
[13]	Kaur H, Yadav S, Srivastava A K, Singh N, Rath S, Schneider J J, Sinha O P and Srivastava R 2018 Nano Res. 11 343
[14]	Zheng B, Chen Y, Wang Z, Qi F, Huang Z, Hao X, Li P, Zhang W and Li Y 2016 2D Mater. 3 035024
[15]	Wang D, Meng J, Zhang X, Guo G, Yin Z, Liu H, Cheng L, Gao M, You J and Wang R 2018 Chem. Mater. 30 3819
[16]	Zheng B, Wang Z, Qi F, Wang X, Yu B, Zhang W and Chen Y 2018 Appl. Surf. Sci. 435 563
[17]	Brooks D J, Douthwaite R E, Brydson R, Calvert C, Measures M G and Watson A 2006 Nanotechnology 17 1245
[18]	Oh S, Kim J B, Song J T, Oh J and Kim S H 2017 J. Mater. Chem. A 5 3304
[19]	Huang Y, Liu L and Liu X 2019 Nanotechnology 30 95402
[20]	Nandi D K, Sen U K, Choudhury D, Mitra S and Sarkar S K 2014 Electrochim. Acta 146 706
[21]	Jin Z, Shin S, Kwon D H, Han S J and Min Y S 2014 Nanoscale 6 14453
[22]	Kwon D H, Jin Z, Shin S, Lee W S and Min Y S 2016 Nanoscale 8 7180
[23]	Xiong D, Zhang Q, Li W, Li J, Fu X, Cerqueira M F, Alpuim P and Liu L 2017 Nanoscale 9 2711
[24]	Kim H J, Jeon H and Shin Y H 2018 J. Appl. Phys. 124 115301
[25]	Shimizu J, Ohashi T, Matsuura K, Muneta I, Kuniyuki K, Tsutsui K, Ikarashi N and Wakabayashi H 2019 IEEE J. Electron. Devices Soc. 7 76
[26]	Hao W, Marichy C and Journet C 2019 2D Mater. 6 012001
[27]	Groven B, Mehta A N, Bender H, Smets Q, Meersschaut J, Franquet A, Conard T, Nuytten T, Verdonck P, Vandervorst W, Heyns M, Radu I, Caymax M and Delabie A 2018 J. Vac. Sci. Technol. A Vac. Surf. Film 36 01A105
[28]	Wu Y, Raza M H, Chen Y C, Amsalem P, Wahl S, Skrodczky K, Xu X, Lokare K S, Zhukush M, Gaval P, Koch N, Quadrelli E A and Pinna N 2019 Chem. Mater. 31 1881
[29]	Yeo S, Nandi D K, Rahul R, Kim T H, Shong B, Jang Y, Bae J S, Han J W, Kim S H and Kim H 2018 Appl. Surf. Sci. 459 596
[30]	Pyeon J J, Baek I H, Lim W C, Chae K H, Han S H, Lee G Y, Baek S H, Kim J S, Choi J W, Chung T M, Han J H, Kang C Y and Kim S K 2018 Nanoscale 10 17712
[31]	Lee N, Lee G, Choi H, Park H, Choi Y, Kim K, Choi Y, Kim J W, Yuk H, Sul O, Lee S B and Jeon H 2019 Appl. Surf. Sci. 496 143689
[32]	Lv J and Liu L 2020 Nanotechnology 31 055602
[33]	Hämäläinen J, Mattinen M, Mizohata K, Meinander K, Vehkamäki M, Räisänen J, Ritala M and Leskelä M 2018 Adv. Mater. 30 1703622
[34]	Mattinen M, Popov G, Vehkamäki M, King P J, Mizohata K, Jalkanen P, Räisänen J, Leskelä M and Ritala M 2019 Chem. Mater. 31 5713
[35]	Chi X, Lan X, Lu C, Hong H, Li C, Chen S, Lai H, Huang W and Xu J 2016 Mater. Res. Express 3 035012

[1]	Surface structure modification of ReSe₂ nanosheets via carbon ion irradiation Mei Qiao(乔梅), Tie-Jun Wang(王铁军), Yong Liu(刘泳), Tao Liu(刘涛), Shan Liu(刘珊), and Shi-Cai Xu(许士才). Chin. Phys. B, 2023, 32(2): 026101.
[2]	Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Chin. Phys. B, 2022, 31(9): 097401.
[3]	Designing high k dielectric films with LiPON—Al₂O₃ hybrid structure by atomic layer deposition Ze Feng(冯泽), Yitong Wang(王一同), Jilong Hao(郝继龙), Meiyi Jing(井美艺), Feng Lu(卢峰), Weihua Wang(王维华), Yahui Cheng(程雅慧), Shengkai Wang(王盛凯), Hui Liu(刘晖), and Hong Dong(董红). Chin. Phys. B, 2022, 31(5): 057701.
[4]	Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers Xiao-Bo He(何小波), Hua-Tian Hu(胡华天), Ji-Bo Tang(唐继博), Guo-Zhen Zhang(张国桢), Xue Chen(陈雪), Jun-Jun Shi(石俊俊), Zhen-Wei Ou(欧振伟), Zhi-Feng Shi(史志锋), Shun-Ping Zhang(张顺平), Chang Liu(刘昌), and Hong-Xing Xu(徐红星). Chin. Phys. B, 2022, 31(1): 017803.
[5]	Characterization and application in XRF of HfO₂-coated glass monocapillary based on atomic layer deposition Yan-Li Li(李艳丽), Ya-Bing Wang(王亚冰), Wei-Er Lu(卢维尔), Xiang-Dong Kong(孔祥东), Li Han(韩立), and Hui-Bin Zhao(赵慧斌). Chin. Phys. B, 2021, 30(5): 050703.
[6]	Influence of N⁺ implantation on structure, morphology, and corrosion behavior of Al in NaCl solution Hadi Savaloni, Rezvan Karami, Helma Sadat Bahari, Fateme Abdi. Chin. Phys. B, 2020, 29(5): 058102.
[7]	Surface termination effects on the electrical characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition Ji-Bin Fan(樊继斌), Shan-Ya Ling(凌山雅), Hong-Xia Liu(刘红侠), Li Duan(段理), Yan Zhang(张研), Ting-Ting Guo(郭婷婷), Xing Wei(魏星), and Qing He(何清)$. Chin. Phys. B, 2020, 29(11): 117701.
[8]	Effect of source temperature on phase and metal–insulator transition temperature of vanadium oxide films grown by atomic layer deposition Bingheng Meng(孟兵恒), Dengkui Wang(王登魁)†, Deshuang Guo(郭德双), Juncheng Liu(刘俊成), Xuan Fang(方铉), Jilong Tang(唐吉龙), Fengyuan Lin(林逢源), Xinwei Wang(王新伟), Dan Fang(房丹), and Zhipeng Wei(魏志鹏)‡. Chin. Phys. B, 2020, 29(10): 107102.
[9]	Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide Cai-Xia Hou(侯彩霞), Xin-He Zheng(郑新和), Rui Jia(贾锐), Ke Tao(陶科), San-Jie Liu(刘三姐), Shuai Jiang(姜帅), Peng-Fei Zhang(张鹏飞), Heng-Chao Sun(孙恒超), Yong-Tao Li(李永涛). Chin. Phys. B, 2017, 26(9): 098103.
[10]	Influences of different oxidants on characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition Ji-Bin Fan(樊继斌), Hong-Xia Liu(刘红侠), Li Duan(段理), Yan Zhang(张研), Xiao-Chen Yu(于晓晨). Chin. Phys. B, 2017, 26(6): 067701.
[11]	Performance and reliability improvement of La₂O₃/Al₂O₃ nanolaminates using ultraviolet ozone post treatment Ji-Bin Fan(樊继斌), Hong-Xia Liu(刘红侠), Bin Sun(孙斌), Li Duan(段理), Xiao-Chen Yu(于晓晨). Chin. Phys. B, 2017, 26(5): 057702.
[12]	Analysis of the induction of the myelin basic protein binding to the plasma membrane phospholipid monolayer Lei Zhang(张蕾), Changchun Hao(郝长春), Ying Feng(冯盈), Feng Gao(高峰), Xiaolong Lu(逯晓龙), Junhua Li(李俊花), Runguang Sun(孙润广). Chin. Phys. B, 2016, 25(9): 090507.
[13]	Influences of different structures on the characteristics of H₂O-based and O₃-based La_xAl_yO films deposited by atomic layer deposition Chen-Xi Fei(费晨曦), Hong-Xia Liu(刘红侠), Xing Wang(汪星), Dong-Dong Zhao(赵冬冬), Shu-Long Wang(王树龙), Shu-Peng Chen(陈树鹏). Chin. Phys. B, 2016, 25(5): 058106.
[14]	Growth mechanism of atomic-layer-deposited TiAlC metal gatebased on TiCl₄ and TMA precursors Jinjuan Xiang(项金娟), Yuqiang Ding(丁玉强), Liyong Du(杜立永), Junfeng Li(李俊峰),Wenwu Wang(王文武), Chao Zhao(赵超). Chin. Phys. B, 2016, 25(3): 037308.
[15]	Influences of annealing on structural and compositional properties of Al₂O₃ thin films grown on 4H-SiC by atomic layer deposition Li-Xin Tian(田丽欣), Feng Zhang(张峰), Zhan-Wei Shen(申占伟), Guo-Guo Yan(闫果果), Xing-Fang Liu(刘兴昉), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平). Chin. Phys. B, 2016, 25(12): 128104.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin films

Cite this article:

Online attention

Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films