Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars

doi:10.1088/1674-1056/ab6960

Abstract This paper presents a new silicon-on-insulator (SOI) lateral-double-diffused metal-oxide-semiconductor transistor (LDMOST) device with alternated high-k dielectric and step doped silicon pillars (HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage (BV) and specific on-resistance (R_on,sp) are obtained. The results indicate that the HKSD device has a higher BV and lower R_on,sp compared to the SD device and HK device.

Keywords: high-k dielectric step doped silicon pillar model breakdown voltage

Received: 17 October 2019
Revised: 16 December 2019
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61704084 and 61874059).

Corresponding Authors: Yu-Feng Guo
E-mail: yfguo@njupt.edu.cn

Cite this article:

Jia-Fei Yao(姚佳飞), Yu-Feng Guo(郭宇锋), Zhen-Yu Zhang(张振宇), Ke-Meng Yang(杨可萌), Mao-Lin Zhang(张茂林), Tian Xia(夏天) Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars 2020 Chin. Phys. B 29 038503

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Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars

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