Chin. Phys. B
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Chin. Phys. B  2020, Vol. 29 Issue (3): 038503    DOI: 10.1088/1674-1056/ab6960
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars
Jia-Fei Yao(姚佳飞)1,2, Yu-Feng Guo(郭宇锋)1,2, Zhen-Yu Zhang(张振宇)1,2, Ke-Meng Yang(杨可萌)1,2, Mao-Lin Zhang(张茂林)1,2, Tian Xia(夏天)3
1 College of Electronic and Optical Engineering&College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2 National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing 210023, China;
3 School of Electrical Engineering, University of Vermont, Burlington, VT 05405, USA

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