Chin. Phys. B
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Chin. Phys. B  2020, Vol. 29 Issue (2): 028501    DOI: 10.1088/1674-1056/ab5f01
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor
Xian-Cheng Liu(刘先程)1, Jia-Jun Ma(马佳俊)1, Hong-Yun Xie(谢红云)1, Pei Ma(马佩)1, Liang Chen(陈亮)2, Min Guo(郭敏)1, Wan-Rong Zhang(张万荣)1
1 Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China;
2 College of Physics and Electronic Engineering, Taishan University, Taian 271000, China

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