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Atomically flat surface preparation for surface-sensitive technologies |
| Cen-Yao Tang(唐岑瑶)1,2, Zhi-Cheng Rao(饶志成)1,2, Qian-Qian Yuan(袁茜茜)3,4, Shang-Jie Tian(田尚杰)5, Hang Li(李航)1,2, Yao-Bo Huang(黄耀波)6, He-Chang Lei(雷和畅)5, Shao-Chun Li(李绍春)3,4, Tian Qian(钱天)1,7, Yu-Jie Sun(孙煜杰)1,7, Hong Ding(丁洪)1,7 |
1 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China;
4 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
5 Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China;
6 Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China;
7 Songshan Lake Materials Laboratory, Dongguan 250100, China |
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Abstract Surface-sensitive measurements are crucial to many types of researches in condensed matter physics. However, it is difficult to obtain atomically flat surfaces of many single crystals by the commonly used mechanical cleavage. We demonstrate that the grind-polish-sputter-anneal method can be used to obtain atomically flat surfaces on topological materials. Three types of surface-sensitive measurements are performed on CoSi (001) surface with dramatically improved quality of data. This method extends the research area of surface-sensitive measurements to hard-to-cleave alloys, and can be applied to irregular single crystals with selective crystalline planes. It may become a routine process of preparing atomically flat surfaces for surface-sensitive technologies.
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Received: 18 November 2019
Revised: 17 December 2019
Accepted manuscript online:
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PACS:
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81.65.Cf
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(Surface cleaning, etching, patterning)
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61.72.Cc
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(Kinetics of defect formation and annealing)
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74.25.Jb
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(Electronic structure (photoemission, etc.))
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68.37.-d
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(Microscopy of surfaces, interfaces, and thin films)
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| Fund: Project supported by the Science Fund from the Ministry of Science and Technology of China (Grant Nos. 2016YFA0401000, 2016YFA0300600, 2016YFA0302400, 2016YFA0300504, and 2017YFA0302901), the National Natural Science Foundation of China (Grant Nos. 11622435, U1832202, 11474340, 11822412, 11574371, 11674369, 11574394, 11774423, and 11774399), the Fund from the Chinese Academy of Sciences (Grant Nos. QYZDB-SSW-SLH043, XDB07000000, and XDB28000000), the Science Challenge Project, China (Grant No. TZ2016004), the K C Wong Education Foundation, China (Grant No. GJTD-2018-01), the Beijing Natural Science Foundation, China (Grant No. Z180008), the Fund from the Beijing Municipal Science and Technology Commission, China (Grant Nos. Z171100002017018, Z181100004218005, and Z181100004218001), the Fundamental Research Funds for the Central Universities, China, and the Research Funds of Renmin University of China (Grant Nos. 15XNLQ07, 18XNLG14, and 19XNLG17). |
Corresponding Authors:
Yu-Jie Sun
E-mail: yjsun@iphy.ac.cn
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Cite this article:
Cen-Yao Tang(唐岑瑶), Zhi-Cheng Rao(饶志成), Qian-Qian Yuan(袁茜茜), Shang-Jie Tian(田尚杰), Hang Li(李航), Yao-Bo Huang(黄耀波), He-Chang Lei(雷和畅), Shao-Chun Li(李绍春), Tian Qian(钱天), Yu-Jie Sun(孙煜杰), Hong Ding(丁洪) Atomically flat surface preparation for surface-sensitive technologies 2020 Chin. Phys. B 29 028101
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