Chin. Phys. B
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Chin. Phys. B  2020, Vol. 29 Issue (2): 026104    DOI: 10.1088/1674-1056/ab65b9
TOPICAL REVIEW—Overcoming doping bottleneck in widegap semiconductors Current Issue| Next Issue| Archive| Adv Search |
Growth and doping of bulk GaN by hydride vapor phase epitaxy
Yu-Min Zhang(张育民)1,2, Jian-Feng Wang(王建峰)1,2, De-Min Cai(蔡德敏)2, Guo-Qiang Ren(任国强)1, Yu Xu(徐俞)1,2, Ming-Yue Wang(王明月)1,2, Xiao-Jian Hu(胡晓剑)1,2, Ke Xu(徐科)1,2
1 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
2 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

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