Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (12): 127202    DOI: 10.1088/1674-1056/ab53d0
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Electrically tunable spin diode effect in a tunneling junction of quantum dot
Xukai Peng(彭许凯)1, Zhengzhong Zhang(张正中)2
1 National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;
2 Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huaian 223003, China

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