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Electrically tunable spin diode effect in a tunneling junction of quantum dot |
| Xukai Peng(彭许凯)1, Zhengzhong Zhang(张正中)2 |
1 National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;
2 Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huaian 223003, China |
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Abstract Control over the tunneling current in spintronic devices by electrical methods is an interesting topic, which is experiencing a burst of activity. In this paper, we theoretically investigate the transport property of electrons in a spin-diode structure consisting of a single quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one half-metallic ferromagnet (HFM) leads, in which the QD has an artificial atomic nature. By modulating the gate voltage applied on the dot, we observe a pronounced decrease in the current for one bias direction. We show that this rectification is spin-dependent, which stems from the interplay between the spin accumulation and the Coulomb blockade on the quantum dot. The degree of such spin diode behavior is fully and precisely tunable using the gate and bias voltages. The present device can be realized within current technologies and has potential application in molecular spintronics and quantum information processing.
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Received: 31 October 2019
Accepted manuscript online:
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PACS:
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72.25.-b
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(Spin polarized transport)
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72.15.Jf
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(Thermoelectric and thermomagnetic effects)
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85.80.Lp
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(Magnetothermal devices)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11404322, 31400810, and 11704180), the Postdoctoral Science Foundation of China (Grant No. 2013M541635), and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B). |
Corresponding Authors:
Zhengzhong Zhang
E-mail: zeikeezhang@163.com
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Cite this article:
Xukai Peng(彭许凯), Zhengzhong Zhang(张正中) Electrically tunable spin diode effect in a tunneling junction of quantum dot 2019 Chin. Phys. B 28 127202
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