Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time

doi:10.1088/1674-1056/ab4e89

Abstract An ultra-high voltage 4H-silicon carbide (SiC) gate turn-off (GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical field is induced to enhance the transportation of the electrons in the thin p-base and reduce recombination. As a result, the turn-on characteristics are improved. What is more, to obtain a low turn-off loss, an alternating p⁺/n⁺ region formed in the backside acts as the anode in the GTO thyristor. Consequently, another path formed by the reverse-biased n⁺-p junction accelerates the fast removal of excess electrons during turn-off. This work demonstrates that the turn-on time and turn-off time of the new structure are reduced to 37 ns and 783.1 ns, respectively, under a bus voltage of 8000 V and load current of 100 A/cm².

Keywords: 4H-SiC gate turn-off (GTO) thyristor turn-on turn-off

Received: 26 July 2019
Revised: 27 September 2019
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Rs	(Thyristors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

Corresponding Authors: Hong-Bin Pu
E-mail: puhongbin@xaut.edu.cn

Cite this article:

Qing Liu(刘青), Hong-Bin Pu(蒲红斌), Xi Wang(王曦) Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time 2019 Chin. Phys. B 28 127201

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Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time

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