Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (12): 128501    DOI: 10.1088/1674-1056/ab4e84
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application
Yue Zhao(赵越)1,2, Nan Wang(王楠)1,2, Kai Yu(余凯)1,2, Xiaoming Zhang(张晓明)3, Xiuli Li(李秀丽)1,2, Jun Zheng(郑军)1,2, Chunlai Xue(薛春来)1,2, Buwen Cheng(成步文)1,2, Chuanbo Li(李传波)3,4
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Opto-Electronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 School of Science, Minzu University of China, Beijing 100081, China;
4 Optoelectronics Research Center, Minzu University of China, Beijing 100081, China

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