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Chin. Phys. B, 2019, Vol. 28(11): 118501    DOI: 10.1088/1674-1056/ab44a1
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Hunting down the ohmic contact of organic field-effect transistor

M Micjan, M Novota, P Telek, M Donoval, M Weis
Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, Bratislava 81219, Slovakia
Abstract  We report properties of contact resistances observed on pentacene organic field-effect transistors (OFET) with four different source/drain electrodes, namely, copper (Cu), gold (Au), silver (Ag), and germanium (Ge). The metals were selected to provide a wide range of energy barriers for charge injection, from blocking contact to smooth injection. All OFETs exhibited strong voltage dependence of the contact resistance, even for devices with smooth injection, which is in strong disagreement with the definition of ohmic contacts. A comparison with current crowding, resistive network, Fowler-Nordheim tunneling, and electric field enhanced thermionic injection (Schottky emission) pointed to importance of local electric fields and/or electrostatic field charges.
Keywords:  organic field-effect transistors      contact resistance      charge injection  
Received:  10 July 2019      Revised:  29 August 2019      Accepted manuscript online: 
PACS:  85.30.-z (Semiconductor devices)  
  73.40.Cg (Contact resistance, contact potential)  
  73.61.Ph (Polymers; organic compounds)  
Fund: Project supported by the Slovak Research and Development Agency (Grant Nos. APVV-17-0501 and APVV-17-0522) and the Slovak Grant Agency for Science (Grants No. 1/0776/15).
Corresponding Authors:  M Weis     E-mail:  martin.weis@stuba.sk

Cite this article: 

M Micjan, M Novota, P Telek, M Donoval, M Weis Hunting down the ohmic contact of organic field-effect transistor 2019 Chin. Phys. B 28 118501

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