Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (10): 107301    DOI: 10.1088/1674-1056/ab3e00
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer
Mei Ge(葛梅)1, Qing Cai(蔡青)1, Bao-Hua Zhang(张保花)2, Dun-Jun Chen(陈敦军)1, Li-Qun Hu(胡立群)1, Jun-Jun Xue(薛俊俊)3, Hai Lu(陆海)1, Rong Zhang(张荣)1, You-Dou Zheng(郑有炓)1
1 The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Department of Physics, Changji College, Changji 831100, China;
3 School of Electronic Science and Engineering, Nanjign University of Posts and Telecommunications, Nanjing 210023, China

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