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Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells |
| Chang-Fu Li(李长富)1,2, Kai-Ju Shi(时凯居)1, Ming-Sheng Xu(徐明升)1, Xian-Gang Xu(徐现刚)3, Zi-Wu Ji(冀子武)1 |
1 School of Microelectronics, Shandong University, Jinan 250100, China;
2 School of Physics and Electronic Engineering, Taishan University, Taian 271000, China;
3 Key Laboratory of Functional Crystal Materials and Devices(Ministry of Education), Shandong University, Jinan 250100, China |
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Abstract The photoluminescence (PL) properties of blue multiple InGaN/GaN quantum well (BMQW) and green multiple InGaN/GaN quantum well (GMQW) formed on a single sapphire substrate are investigated. The results indicate that the peak energy of GMQW-related emission (PG) exhibits more significant “S-shaped” dependence on temperature than that of BMQW-related emission (PB), and the excitation power-dependent carrier-scattering effect is observed only in the PG emission; the excitation power-dependent total blue-shift (narrowing) of peak position (line-width) for the PG emission is more significant than that for the PB emission; the GMQW shows a lower internal quantum efficiency than the BMQW. All of these results can be attributed to the fact that the GMQW has higher indium content than the BMQW due to its lower growth temperature and late growth, and the higher indium content in the GMQW induces a more significant compositional fluctuation, a stronger quantum confined Stark effect, and more non-radiative centers.
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Received: 24 June 2019
Revised: 16 August 2019
Accepted manuscript online:
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PACS:
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78.55.-m
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(Photoluminescence, properties and materials)
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78.67.De
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(Quantum wells)
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72.15.Rn
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(Localization effects (Anderson or weak localization))
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85.60.Jb
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(Light-emitting devices)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51672163, 51872167, and 61504044) and the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112). |
Corresponding Authors:
Zi-Wu Ji
E-mail: jiziwu@sdu.edu.cn
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Cite this article:
Chang-Fu Li(李长富), Kai-Ju Shi(时凯居), Ming-Sheng Xu(徐明升), Xian-Gang Xu(徐现刚), Zi-Wu Ji(冀子武) Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells 2019 Chin. Phys. B 28 107803
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