Charge trapping memory device based on the Ga2O3 films as trapping and blocking layer

doi:10.1088/1674-1056/ab3e62

Abstract We present a new charge trapping memory (CTM) device with the Au/Ga₂O₃/SiO₂/Si structure, which is fabricated by using the magnetron sputtering, high-temperature annealing, and vacuum evaporation techniques. Transmission electron microscopy diagrams show that the thickness of the SiO₂ tunneling layer can be controlled by the annealing temperature. When the devices are annealed at 760 ℃, the measured C-V hysteresis curves exhibit a maximum 6 V memory window under a ±13 V sweeping voltage. In addition, a slight degradation of the device voltage and capacitance indicates the robust retention properties of flat-band voltage and high/low state capacitance. These distinctive advantages are attributed to oxygen vacancies and inter-diffusion layers, which play a critical role in the charge trapping process.

Keywords: charge trapping memory SiO₂ tunneling layer annealing temperature

Received: 07 June 2019
Revised: 22 August 2019
Accepted manuscript online:

PACS:	68.35.Fx	(Diffusion; interface formation)
	85.25.Hv	(Superconducting logic elements and memory devices; microelectronic circuits)
	06.60.Ei	(Sample preparation)
	21.10.Ft	(Charge distribution)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61674050 and 61874158), the Top-notch Youth Project in Hebei Province, China (Grant No. BJ2014008), the Outstanding Youth Project of Hebei Province, China (Grant No. F2016201220), the Outstanding Youth Cultivation Project of Hebei University, China (Grant No. 2015JQY01), the Project of Science and Technology Activities for Overseas Researcher, China (Grant No. CL201602), the Institute of Baoding Nanyang Research-New Material Technology Platform, China (Grant No. 17H03), the Project of Distinguished Young of Hebei Province, China (Grant No. A2018201231), the Training Program of Innovation and Entrepreneurship for Undergraduates, China (Grant Nos. 201710075013 and 2017075), the Support Program for the Top Young Talents of Hebei Province, China (Grant No. 70280011807), Training and Introduction of High-level Innovative Talents of Hebei University, China (Grant No. 801260201300), Hundred Persons Plan of Hebei Province, China (Grant Nos. 606999919001, 606999919013, 606999919014, and 801260201300), and Innovation Funding Project of Hebei Province, China (Grant No. CXZZBS2019030).

Corresponding Authors: Qingshun Zhang, Xiaobing Yan
E-mail: 87086486@qq.com;yanxiaobing@ime.ac.cn,xiaobing_yan@126.com

Cite this article:

Bing Bai(白冰), Hong Wang(王宏), Yan Li(李岩), Yunxia Hao(郝云霞), Bo Zhang(张博), Boping Wang(王博平), Zihang Wang(王子航), Hongqi Yang(杨红旗), Qihang Gao(高启航), Chao Lü(吕超), Qingshun Zhang(张庆顺), Xiaobing Yan(闫小兵) Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer 2019 Chin. Phys. B 28 106802

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Charge trapping memory device based on the Ga2O3 films as trapping and blocking layer

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Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer