Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-μm BCD process

doi:10.1088/1674-1056/28/8/088501

Abstract Gate-grounded N-channel MOSFET (GGNMOS) has been extensively used for on-chip electrostatic discharge (ESD) protection. However, the ESD performance of the conventional GGNMOS is significantly degraded by the current crowding effect. In this paper, an enhanced GGNMOS with P-base layer (PB-NMOS) are proposed to improve the ESD robustness in BCD process without the increase in layout area or additional layer. TCAD simulations are carried out to explain the underlying mechanisms of that utilizing the P-base layer can effectively restrain the current crowing effect in proposed devices. All devices are fabricated in a 0.5-μm BCD process and measured using the transmission line pulsing (TLP) tester. Compared with the conventional GGNMOS, the proposed PB-NMOS devices offer a higher failure current than its conventional counterpart, which can be increased by 15.38%. Furthermore, the PB-NMOS_type3 possesses a considerably lower trigger voltage than the conventional GGNMOS to protect core circuit effectively.

Keywords: ESD GGNMOS failure current trigger voltage

Received: 28 March 2019
Revised: 15 May 2019
Accepted manuscript online:

PACS:

85.30.De

(Semiconductor-device characterization, design, and modeling)

Corresponding Authors: Zhiwei Liu
E-mail: ziv_liu@hotmail.com

Cite this article:

Fei Hou(侯飞), Ruibo Chen(陈瑞博), Feibo Du(杜飞波), Jizhi Liu(刘继芝), Zhiwei Liu(刘志伟), Juin J Liou(刘俊杰) Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-μm BCD process 2019 Chin. Phys. B 28 088501

[1]	Wang A 2002 On-Chip ESD Protection For Integrated Circuits (Boston: Springer) pp. 51-59
[2]	Leroux C, Buj C and Chnate J P 1995 Proceedings of the 25th European Solid State Device Research Conference, September 25-27, 1995, Hague, Netherlands, p. 321
[3]	Song B, Han Y, Li M, Dong S, Guo W, Huang D, Ma F and Miao M 2010 Electron. Lett. 46 518
[4]	Zhou Z, Jin X and Wang Y 2016 Proceedings of the 13th IEEE International Conference on Solid-state & Integrated Circuit Technology, October 25-28, 2016, Hangzhou, China, p. 1
[5]	Kim C, Park H, Kim Y, Kang D, Lee M, Lee S, Jeon C, Kim H, Yoo Y and Yoon H 2000 Proceedings of the IEEE Electrical Overstress/Electrostatic Discharge Symposium, September 26-28, 2000, Anaheim, USA, p. 26
[6]	Li J, Alvarez D, Chatty K, Abou-khalil M J, Gauthier R, Russ C, Seguin C and Halbach R 2006 Proceedings of the 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, July 3-7, 2006, Singapore, Singapore, p. 276
[7]	Chaing C, Chang P, Tseng P, Lai P, Tang T and Su K 2016 Proceedings of the IEEE International Reliability Physics Symposium, April 17-21, 2016, Pasadena, USA, p. EL.3.1
[8]	Chatty K, Chatty K, Alvarez D, Gauthier R, Russ C, Abou-Khalil M and Kwon B J 2007 Proceedings of the 29th Electrical Overstress/Electrostatic Discharge Symposium, September 16-21, 2007, Anaheim, USA, p. 7A.2-1
[9]	Wang C, Chen Y, Tang T and Su K 2013 Proceedings of the IEEE International Reliability Physics Symposium, April 14-18, 2013, Anaheim, USA, p. EL.3.1
[10]	Alvarez D, Abou-Khalil M J, Russ C, Chatty K, Gauthier R, Kontos D, Li J, Seguin C and Halbach R 2006 Microelectron. Rel. 46 1597
[11]	Haken R A, Havemann R H, Eklund R H and Hutter L N 1990 BiCMOS Technology and Applications (Boston: Springer) pp. 63-64

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Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-μm BCD process

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