Study on the nitridation of β-Ga2O3 films

doi:10.1088/1674-1056/28/8/088103

Abstract

Single-crystal GaN layers have been obtained by nitriding β-Ga₂O₃ films in NH₃ atmosphere. The effect of the temperature and time on the nitridation and conversion of Ga₂O₃ films have been investigated. The nitridation process results in lots of holes in the surface of films. The higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN films. The converted GaN porous films show the single-crystal structures and low-stress, which can be used as templates for the epitaxial growth of high-quality GaN.

Keywords: β-Ga₂O₃ nitridation GaN single-crystal

Received: 12 May 2019
Revised: 19 June 2019
Accepted manuscript online:

PACS:	81.65.Lp	(Surface hardening: nitridation, carburization, carbonitridation ?)
	81.05.Ea	(III-V semiconductors)
	61.05.cp	(X-ray diffraction)

Fund:

Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0404201), the Six-Talent Peaks Project in Jiangsu Province, China (Grant No. XCL-107), the State Key Research and Development Program of Jiangsu Province, China (Grant No. BE2018115), the Fund from the Solid-state Lighting and Energy-saving Electronics Collaborative Innovation Center, PAPD, and the Fund from the State Grid Shandong Electric Power Company.

Corresponding Authors: Hong Zhao, Xiang-Qian Xiu, Rong Zhang
E-mail: zhaohong@nju.edu.cn;xqxiu@nju.edu.cn;rzhang@nju.edu.cn

Cite this article:

Fei Cheng(程菲), Yue-Wen Li(李悦文), Hong Zhao(赵红), Xiang-Qian Xiu(修向前), Zhi-Tai Jia(贾志泰), Duo Liu(刘铎), Xue-Mei Hua(华雪梅), Zi-Li Xie(谢自力), Tao Tao(陶涛), Peng Chen(陈鹏), Bin Liu(刘斌), Rong Zhang(张荣), You-Dou Zheng(郑有炓) Study on the nitridation of β-Ga₂O₃ films 2019 Chin. Phys. B 28 088103

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Study on the nitridation of β-Ga₂O₃ films